P462 – 9″X9″ HV Ion beam etching NOB
Application
HV ion beam etching system for surface structuring of max. 9″ x 9″ substrates
Year of delivery
2019
Installation site
NOB, Berlin, Germany
Design Features
- HV ion beam etching system with focused gridded RF ion beam source.
- Fully motorized 3 axes sample manipulator (x, y, phi sample stage).
- Laser based sample stage alignment for reproducible assambly after service at sample stage.
- Flow box integration.
Special Features
- Different sample sizes from 2″ wafer up to 9″ x 9″ samples can be handled.
- Vector motion in x-y plane (linear and circular).
Outer Dimensions
Technical specifications and performance values
General
Etching chamber
Size
About 750 mm width, about 700 mm depth, about 1000 mm height (D-shape chamber with door)
Material
stainless steel
Vacuum
Etching chamber
Base pressure
< 2 *10-7 mbar
Pump down time
< 1 hour to < 10-6 mbar
Chamber pumping
Turbo pumping stage, chamber lid differentially pumped by dry foreline pump
Manipulator features
Etching chamber
Sample size
max. 9″ x 9″ substrate
Motion axes
3 motorized axes (x tranlsation, y translation and sample stage rotation)
Special features
Vector motion in x-y plane (linear and circular).
Performance test results
Chamber pump down
Speed profile repeatability
